发明名称 CMOS SEMICONDUCTOR DEVICE
摘要 A semiconductor device may include both analogue and digital CMOS elements formed on the same ship with each of the CMOS elements having a conventional source region (16), a drain region (15), and a diffusion region (14, 17) located adjacent to it. In this case, in the past the diffusion region (14, 17) and the source region (16) have always been connected together and to a power supply terminal by a common conductor (31). This has resulted in noise picked up by the diffusion region (14, 17) being transmitted directly to the source region (16). This defect is overcome by using separate conductors (31-1) and (31-2) which are physically independent of each other with one conductor (31-1) being connected between a power supply terminal (+ VSS) and the source region (16), and the other conductor (31-2) being connected between the power supply terminal (+ VSS) and the diffusion region (14, 17).
申请公布号 DE3064404(D1) 申请公布日期 1983.09.01
申请号 DE19803064404 申请日期 1980.07.21
申请人 FUJITSU LIMITED 发明人 ITO, AKIHIKO;SAITO, TADAHIRO
分类号 H01L21/60;H01L21/3205;H01L21/8238;H01L23/52;H01L27/092;H01L29/417;H01L29/78;(IPC1-7):H01L27/08 主分类号 H01L21/60
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