| 摘要 |
PURPOSE:To enable to avoid accumulation of hydrogen in a groundwork oxide film, and to enable to reduce density at the hole catching center of the semiconductor device by a method wherein an opening part to form the path for hydrogen is provided to a surface protective film consisting of silicon nitride film. CONSTITUTION:Diffusion layers 2, 3 are formed in the surface of an Si wafer 1, a gate oxide film 4 and a gate electrode 5 are formed between the layers thereof, and a field oxide film 6 is formed at the circumference to constitute the MOS semiconductor device. The silicon nitride film 8 is opened to the outside against the groundwork oxide film through the side 9, an aluminum electrode 10 and a surface metal film 11, and hydrogen (H) occluded in the oxide film is discharged to the outside through the opening parts thereof. |
