发明名称 |
Etching apparatus and method |
摘要 |
In a plasma-assisted dry etching process designed to pattern VLSI devices, a relatively high and uniform etch rate exhibiting low contamination is achieved over the entire surface extent of each wafer to be etched. This is accomplished by mounting the wafers in a unique fashion on one of two spaced-apart electrodes in the reaction chamber of a dry etching system. In particular, the front surface of each wafer is maintained in substantially the same plane as that of surrounding dielectric material. Additionally, the thickness of the surrounding dielectric material is designed to be considerably greater than the thickness of any dielectric material in contact with the back surface of each wafer. In that way, the entire front surface extent of each wafer is influenced by a relatively uniform electric field. Moreover, the available field in the chamber is in effect focussed onto the wafer surfaces, thereby achieving a relatively high etch rate characterized by low contamination.
|
申请公布号 |
US4400235(A) |
申请公布日期 |
1983.08.23 |
申请号 |
US19820362045 |
申请日期 |
1982.03.25 |
申请人 |
BELL TELEPHONE LABORATORIES, INCORPORATED |
发明人 |
COQUIN, GERALD A.;MORAN, JOSEPH M.;TAYLOR, GARY N. |
分类号 |
H01L21/673;(IPC1-7):H01L21/30;B44C1/22;C03C15/00;C03C25/06 |
主分类号 |
H01L21/673 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|