| 摘要 |
PURPOSE:To obtain hermetic sealing method for semiconductor package which assures sealing within a short period of time by forming metallized layer to the edge of ceramic cover, and forming, after plating such layer, a soluble metal layer on said plated layer. CONSTITUTION:A ceramic package 4 comprising a recess 2 for housing a semicondutor element 1 and a lead 3 is prepared. At the periphery of ceramic cover 8, a high melting point metallized layer 9 is formed corresponding to a metallized layer 5. A plating layer 10 is formed thereon and a soluble metal layer 11 is formed thereon. The ceramic cover 8 on which such soluble metal layer 11 is integrated is placed in such a way that it overlaps on the side edge of aperture of the package 4. The soluble metal layer 11 is melted when said package passes through the heating furnace. Thereby the ceramic cover 8 and package 4 are integrated through melting of the metal layer. |
