| 摘要 |
PURPOSE:To realize a semiconductor storage device which can accommodate itself highly accurately to the variation of the VF which is inherent to the Shottky barrier diode, by further interporating a similar Shottky barrier diode for compensating the variation of the forward voltage of the Shottky barrier diode in the circuit configuration. CONSTITUTION:A Shottky barrier diode (SBD) DS3 is incorporated in a bias circuit 20. When the VF of SBDs DS1 and DS2 is large, the VF of the SBD DS3 is also large, and then, the electric potential at a point P in the diagram turns to be large in accompanied with the large VF. On the other hand, and the higher electric potential at the point P is informed to the 1st constant-current circuit 18 through a transistor Q3. That is to say, the electric conduction of the transistor Q3 is deepened to increase the constant current of the circuit 18. Therefore, an electric current (i) excessively flows along the route shown by arrows in the diagram. By the electric current (i), the voltage drop at a resistance R3 is increased to lower the electric potential of a word line 12 and to compensate the large VF of SBDs DS1 and DS2 in a memory cell 11. |
