| 摘要 |
<p>A resin encapsulated semiconductor device comprises a field effect transistor element 1 having source, drain and gate electrodes, leads S, G2 connected to the electrodes of the element 1 and a resin encapsulated body 2. One of the leads, e.g. the lead S connected to the source electrode of the element 1, is either connected to a conductor plate 3 on which the element 1 is mounted, or is integral therewith. The lower surface of the conductor plate 3 is exposed outside the resin body so that the conductor plate is easily grounded to provide excellent stability and maximum gain reduction at high frequency operation. <IMAGE></p> |
