| 摘要 |
PURPOSE:To solidify the resistance value of a high resistance polycrystalline silicon film by forming the film, and then heat treating at a specific temperature between a high temperature heat treatment and a low temperature heat treatment. CONSTITUTION:After a high resistance polycrystalline silicon film is formed, a heat treatment is, in order to perform an impurity activation or glass flow, performed at approx. 1,050 deg.C for approx. 15min. When an intermediate temperature heat treatment of 800-900 deg.C is then performed for approx. 20min, the resistance value of the film rises. Thereafter, a low temperature heat treatment not higher than 500 deg.C is performed. When the heat treatment is performed at 800-900 deg.C in this manner, the resistance value of the film is fixed, and is not entirely varied enen if a low temperature heat treatment is performed later. |
