发明名称 Structure with a silicon body having through openings
摘要 A structure for shaping or masking energetic radiation is described. The structure comprises a shallow silicon body having at least one through opening, and a metal silicide layer covering the surface of the structure. The structure characterized by having a high mechanical, and thermal stability may be used particularly in electron and X-ray lithography. More specifically, the structure may be used as an aperture for electron beams, or as a mask for X-rays. The production of the structure includes the steps of making through openings in the silicon body, and the forming of the silicide layer by vapor depositing a metal on the surface of the silicon body and by subsequent annealing.
申请公布号 US4393127(A) 申请公布日期 1983.07.12
申请号 US19810284268 申请日期 1981.07.17
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 GRESCHNER, JOHANN;KRAUS, GEORG;SCHMID, GERHARD E.
分类号 C30B33/00;G03F1/16;H01L21/027;H01L29/06;(IPC1-7):H01L21/30 主分类号 C30B33/00
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