发明名称 |
Structure with a silicon body having through openings |
摘要 |
A structure for shaping or masking energetic radiation is described. The structure comprises a shallow silicon body having at least one through opening, and a metal silicide layer covering the surface of the structure. The structure characterized by having a high mechanical, and thermal stability may be used particularly in electron and X-ray lithography. More specifically, the structure may be used as an aperture for electron beams, or as a mask for X-rays. The production of the structure includes the steps of making through openings in the silicon body, and the forming of the silicide layer by vapor depositing a metal on the surface of the silicon body and by subsequent annealing.
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申请公布号 |
US4393127(A) |
申请公布日期 |
1983.07.12 |
申请号 |
US19810284268 |
申请日期 |
1981.07.17 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
GRESCHNER, JOHANN;KRAUS, GEORG;SCHMID, GERHARD E. |
分类号 |
C30B33/00;G03F1/16;H01L21/027;H01L29/06;(IPC1-7):H01L21/30 |
主分类号 |
C30B33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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