| 摘要 |
PURPOSE:To allow the reduction of the resistance of a clear electrode by approx. 50% and further considerably improve the transmittance by a double layer structure, by forming an Si dioxide film between a transparent insulating substrate and the clear electrode. CONSTITUTION:The transparent insulating substrate 1 is loaded in a sputtering device, and first an Si dioxide film 5 is grown under an argon atmosphere by a sputtering so that the thickness is several hundred-several thousand Angstrom . Next, the clear electrode (In2O3)2 is grown under the argon atmosphere by the sputtering, then the atmosphere of the device is changed into hydrogen, thus Si is sputtered, and thereby an amorphous Si film 3 is formed. The formed assembly body is taken out, and a metallic electrode (Au)4 is formed by an evaporation method resulting in the manufacture of a photovoltaic device. Thus, when continuous manufacture is performed by the same device, a clean operation can be performed with less contaminations. |
