| 摘要 |
<p>PURPOSE:To improve adhesion between an SBFET chip and an additional electrode by mounting a projecting metallic section for bonding the additional electrode and the SBFET chip onto the same plane as the projecting electrode of the SBFET chip. CONSTITUTION:Metallic films 6 for adhesion are formed to the surface section of a semiconductor at the same time as source electrodes 2 and a drain electrode 4 are shaped. The manufacturing process of an SBFET the same as conventional devices is executed, and the projecting metallic sections 61 for strengthening adhesion are shaped onto the metallic films 6 for adhesion previously formed at the same time as the source projecting electrodes 21, the gate projecting electrode 31 and the drain projecting electrode 41 for flip chip bonding are shaped in a process molding these projecting electrodes. The additional electrode 22 is bonded, and bonded with a carrier 5, thus completing the flip chip type semiconductor device.</p> |
