| 摘要 |
PURPOSE:To reduce the resistance in the boundary between a buried layer and a channel layer by a method wherein the rear side of a substate is subjected to laser irradiation whereby an N type impurity contained dense in the buried layer is diffused into the entire channel layer. CONSTITUTION:A channel layer 2, electron-donative layer 3 and mask layer 4 are provided on a substate 1 composed of semi-insulative GaAs. By using the mask layer 4, the electron-donative layer 3 and the upper half of the channel layer 2 are selectively removed, and buried layers 7 are provided in the removed region. Next, the mask layer 4 is removed, the rear side of the substrate 1 is subjected to laser irradiation, for the N type impurity contained densely in the buried layers 7 is diffused into the entire channel layer 2 for the establishment of an ohmic contact between the layers 7 and 2. Finally, source/drain electrodes 9 are formed on the buried layers 7, and then a gate electrodes 10 is built. |
