| 摘要 |
PURPOSE:To obtain recrystallized layer with good yield by forming a groove of depth/width >=0.1 on an Si3H4 film on a glass substrate, executing ion implantation after stacking a poly Si and by executing the laser annealing in parallel to the groove in such a relation of optical point diameter/scanning width >=1. CONSTITUTION:An Si3N4 film 2 is stacked on a transparent glass plate 1, a groove in depth of 0.2mum and width of 2mum is provided thereon and a poly Si 3 is stacked thereon. The P ion beam is irradiated to the specified area and the scanning is carried out in parallel to the groove in the desired pattern by the Ar with laser beam in the spot diameter of 100mum and scanning width of 50mum. The temperature of glass substrate during the annealing is 500 deg.C. When the annealing is carried out with a depth/width ratio of groove is 0.1 or more and spot diameter/scanning width ratio of beam is equal to or larger than 1, a deep and wide recrystallized area is generated at the laser irradiation area of the poly Si and the surface is covered with an oxide film. According to this constitution, any crack of poly Si is not generated due to the annealing and a homogeneous poly Si having uniform grain size can be obtained and moreover an excellent semiconductor grapho epitaxy substrate for FET can be obtained. |
