发明名称 MARK FOR ALIGNMENT ON SEMICONDUCTOR WAFER AND MANUFACTURE THEREOF
摘要 PURPOSE:To form an alignment mark havng a large contrast, by interposing a region defined by a flat surface between regions where a multiplicity of minute cavities each having a circular cross section are arranged. CONSTITUTION:At a predetermined position on a main surface 2 of a semiconductor wafer 1, at least two regions 4 and 5 are formed each of which has a multiplicity of minute cavities 3 arranged therein. In addtion, a region 7 defined by a linearly elongated flat surface 6 is disposed between the regions 4, 5. In this case, the minute cavities 3 are linearly elongated adjacently to each other. Such an alignment mark has no regular reflection at the cavities 3 in the regions 4, 5 but has a regular reflection at the flat surface 6 in the region 7. Thus, it is possible to form an alignment mark having a large contrast.
申请公布号 JPS5890728(A) 申请公布日期 1983.05.30
申请号 JP19810188654 申请日期 1981.11.25
申请人 NIPPON DENSHIN DENWA KOSHA 发明人 KINOSHITA HIROO;ONO TOSHIROU
分类号 H01L21/68;G03F9/00;H01L21/027;H01L21/30;H01L21/67 主分类号 H01L21/68
代理机构 代理人
主权项
地址
您可能感兴趣的专利