| 摘要 |
PURPOSE:To provide a single crystal substrate for an inexpensive insulator isolating device by employing magnesium gas, aluminum chloride gas and oxidative gas without using hydrogen gas, thereby epitaxially growing magnesia spinel on an Si single crystal substrate. CONSTITUTION:A reaction tube has an outer tube 1 and a bore inner tube 2, aluminum chloride is placed in the chamber 3 of the inner tube and metal magnesium is placed in the chamber 4 of the inner tube. The aluminum chloride in the chamber 3 is evaporated at 100 deg.C, and metal magnesium in the chamber 4 is evaporated at 700 deg.C, and 10l/min of N2 gas is flowed from gas inlets 5 and 6, respectively. On the other hand, 0.1cc/min. of oxygen gas is flowed and 10l/ min. of nitrogen gas is flowed from the gas inlets. A (100)Si single crystal substrate 10 formed on substrate holder 9 is placed in a growing chamber 8, and is heated to 950 deg.C. As a result, the epitaxial film of MgO.Al2O5 is grown at the growing speed of approx. 1um/hr on the Si single crystal substrate. |
