| 摘要 |
PURPOSE:To make an etching process for formation of electrode needless at a refractive index differentiating waveguide type semiconductor laser by a method wherein a p side electrode and an n side electrode are formed being separated respectively on the upper and lower faces of a substrate. CONSTITUTION:An n type clad layer 10 and a p type clad layer 13 are arranged holding an active layer 12 to oscillate laser rays and provided on a substrate 9 from the upper and lower sides. Moreover impurity regions 15 to control the lateral mode of laser oscillation are provided at the outsides of the laser oscillating region. Moreover a p side electrode 16 is arranged on the p type clad layer 13 side, and an n side electrode 17 is arranged on the substrate 9 side. Because the p side electrode 16 and the n side electrode 17 are formed being divided into the upper and lower faces of the substrate 9 respectively like this, the etching process for formation of electrode can be made needless. |
