| 摘要 |
PURPOSE:To obtain the molecular beam epitaxial crystal film of few defects by a method wherein the molecular lumps generated at a molecular generating source is thoroughly decomposed in a decomposition chamber utilizing molecular beam epitaxial crystal film growing device. CONSTITUTION:The molecular beam is injected from the small hole 1' of the crucible by heating the molecular source 2 which was placed in the crucible 1 using a heating material 3. The molecular beam injected from the small hole 1' is decomposed in the molecular lump decomposition chamber consisting of a glass tube 10 and a coil 11, and injected from an injection port 10. No. 4 in the diagram is a heat reflecting plate, which is used to efficiently heat the molecular beam source 2, and the plate is provided surrounding the crucible 1. Nos. 5 and 6 are the supporting members of the crucible 1, and the supporting members 5 and 6 are fixed to a supporting member mounting plate 7 using a bolt 8 and a nut 8'. No. 14 is a gas introducing port, and as the molecular lump is efficiently decomposed in the decomposition chamber consisting of 10 and 11, the gas can be easily introduced. |
