| 摘要 |
<p>PURPOSE:To stabilize optical output, and to isolate the elements positively by forming a light-emitting region having the laminating structure of a P type layer and an N type layer onto a P type GaAs substrate and surrounding the region by an N type GaAs high resistance layer. CONSTITUTION:The N type high resistance GaAs layers are grown onto the P type GaAs substrate 2-2 in an epitaxial manner, and sections to which the light- emitting regions must be shaped are removed through etching. P type GaAlAs layers 2-4 and N type GaAlAs layers 2-5 are successively grown in an epitaxial manner, and the light-emitting regions are shaped. When ohmic electrodes 2-1, 2-6 are lastly formed to the surface and the back, the monolithic semiconductor light-emitting element is completed. Since there are the high resistance GaAs layers 2-3, beams do not leak to adjacent junction sections, and radiatnt power wavelength and optical output are stabilized.</p> |
