| 摘要 |
In a method of fabricating a semiconductor device, one surface of a semiconductor body is coated with a first insulating layer in which a first opening is made for fabricating a first semiconductor zone and a second opening for fabricating a second semiconductor zone. A second insulating layer is deposited on the surface having the first insulating layer and the two openings and the material of the second insulating layer is removed from the second opening in the first insulating layer by means of the photoresist procedure. To produce the second semiconductor zone, impurities are introduced into the semiconductor body through the exposed opening in a preliminary process, the second semiconductor zone being driven more deeply into the semiconductor body in one or more postdiffusions. Then the material of the second insulating layer is also removed from the first opening in the first insulating layer and the first semiconductor zone is fabricated in the semiconductor body through the first opening.
|
