| 摘要 |
PURPOSE:To obtain a resist pattern with high sensitivity and high resolution by a method wherein a latent image is formed by irradiating a radiant ray at a positive type resist film consisting of a copolymer of phenylemetacrylate and metacrylic acid stipulated respective composition and the latent image is developed by a developer including a polar organic solvent. CONSTITUTION:A positive-type resist film is formed by using a copolymer consisting of phenylemetacrylate of 60-90% by mole and metacrylic acid of 40- 10% by mole. Next, a radiant ray is irradiated at the film to obtain a latent image and the latent image is developed by using a developer including a polar organic solvent. The copolymer of phenylemetacrylate and metacrylic acid containing benzene ring is made with normal methods such a bulk polymerization method, solution polymerization, emulsion polymerization method or the like and 1,4-dioxane, tetrahydrofuran, dimethylformamide or the like are used as the polar organic solvent. This permits superior dry etching resistance and a resist having good adhesion against a substrate is obtained. |
