| 摘要 |
PURPOSE:To apply titled etching to each one sheet of wafers with a highly corrosive gas by introducing the gas supplied continuously from an etching gas source into the system at every etching, and discharging it to the outside of the system in stages other than etching. CONSTITUTION:Wafters 10 are removed by each sheet from a cassette 8 and are fed to an etching chamber 1 via a load lock chamber 2 by means of conveying belts 11, 12 and a handling mechanism 15. Gaseous CCl4 is fed at all times to a bypass conduit 20 from a cylinder 17. When the wafers 10 are placed in the chamber, the gaseous CCl4 is fed into the chamber 1 to etch the wafers dry. When the etching is completed, the gaseous CCl4 is again fed to the conduit 20; at the same time, the gas is released from the chamber 1 with a mechanical booster 21, and the greater part of the CCl4 is captured with a trap 22. The remaining gas is released into the atmosphere with a rotary pump 23. The wafers 10 are thence contained in a cassette 9 via an unload lock chamber 3. N2 is properly introduced from a cylinder 25 into the chambers 2, 3, and is discharged with a rotary pump 24. |
