| 摘要 |
PURPOSE:To reduce manufacturing cost of solar cells by producing a P-I-N junction on a substrate and by restricting crystal particle size of an intrinsic layer not more than five mu. CONSTITUTION:Molybdenum 2 is deposited on a glass plate 1 and polycrystalline silicon layers 5,6 are produced on it by gas phase growth under reduced pressure or by glow discharge to produce comb-shaped opposed electrodes 7 and an outlet terminal 8. It is more advantageous to use the gas phase growth under reduced pressure than to use the glow discharge for production of the layers 5,6 owing to smaller crystal grain boundaries and less recombination centers. When the gas phase growth is employed, it is easier for manufacturing process to use SiH4 than to use SiCl2 or SiCl4. When polysilicon is formed by gas phase growth under reaction pressure of five torr and at thermal decomposition temperature of 650 deg.C, produced particle diameter can be 0.1mu. No recombination centers can theoretically be produced in polycrystalline semiconductors, but practically only polycrystals having lower density of recombination centers can be produced depending on types of manufacturing procedures employed. Thin layers of uniform polycrystalline films having less pinholes can be formed by such processes and electric charge formed by the p-n junction or P-I-N junction can be diffused rapidly to electrodes 2,7, i.e. solar cells of good quality can be produced at lower cost. |
