| 摘要 |
PURPOSE:To produce a device of faster operating speed by conversion of a non- monocrystalline semiconductor film on an insulator film into a monocrystal. CONSTITUTION:A field oxide layer 2, gate oxide layer 4 and exposed area of the substrate 3 are selcetively provided on a monocrystalline silicon substrate 1 and a polysilicon film 5 is deposited upon those layers by CVD process. The polysilicon 5 is then converted into a monocrystal ranging from the opening 3 to the SiO2 layer 2 through the opening using the adjoining silicon substrate 1 as growing source by ion implantation for producing defects and by irradiation of a laster beam 7 to make the polysilicon on the entire surface monocrystalline silicon of the same crystal orientation as the substrate. The energy is given only to the polysilicon layer 5 by porperly setting the diameter of the laser beam and energy density. An FET can be formed by use of such a silicon layer with the sources 11, 12 and drains 12, 14 provided as specified, and such advantages can be obtained as the active region 10 is of high-speed operation and of island arrangement having the same effect as SOS structure compared with bulk elements. |
