| 摘要 |
PURPOSE:To allow quickly obtaining a large single crystal semiconductor layer, by sloping periferal walls of an aperture part so that the aperture part of an insulator layer expansion-opens toward the surface of the insulator layer. CONSTITUTION:A liquid epitaxial growth or a solid epitaxial growth starts from a part 31a contacted on the semiconductor substrate 1 of the semiconductor layer 3a by a heat treatment by irradiating light rays or electron rays from a laser device or a flash lamp onto the semiconductor layer 3a based on a semiconductor. Since the peripheral walls of this aperture part 21a are sloped so that the aperture part 21a of the insulator layer 2a expansion-opens toward the surface, the single crystal growth starting at the part 31a of the semiconductor layer 3a quickly expanses along the sloped peripheral walls of the aperture part 21a toward the upper part 32 of the insulator layer 2a. Therefore, a good quality single crystal layer is obtained in a wide range. |
