发明名称 LIGHT MEMORY ELEMENT
摘要 PURPOSE:To obtain a high-sensity and cheap light memory having a high sensitivity within a wide wave length range by a method in which an absorption- reflection layer and a decomposition layer are provided and the absorption- reflection layer is deformed by gas generated in the decomposition layer. CONSTITUTION:A light memory element is obtained by laminating a 1.5-5mum thick decomposition layer 13 composed of polymethylmethacrylate, polyamide resin, etc., and a 500-1,000Angstrom -thick absorption-reflection layer 15 composed of a vitreous metal (e.g., 40% Ni, 20% W, and 40% Te). A data-writing electromagnetic wave from laser 17 is focused on the layer 15 through a collimator/beam expander 19 and an object lens 23 in such a way as to partly absorb and partly reflect it, part of the layer 13 is decomposed by the heat produced by the absorption to generate gases, and the layer 15 is deformed by the gases for recording. Then, reflected electromagnetic wave is focused into an image on an image filter 29 through a reflecting mirror 21, a lens 25, and a space filter 27, diffraction image is removed, and light is focused on a detector 33 through a light- collecting lens 31 for reading.
申请公布号 JPS5816891(A) 申请公布日期 1983.01.31
申请号 JP19820122788 申请日期 1982.07.14
申请人 YOKOGAWA HIYUURETSUTO PATSUKAADO KK 发明人 HENRI BIRETSUKI;SUCHIIBUN ERU NABAAFUISU
分类号 G11C17/00;B41M5/26;G11B7/24;G11B7/241;G11B7/243;G11B7/257 主分类号 G11C17/00
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