| 摘要 |
PURPOSE:To alleviate the reflection of ultraviolet rays reaching on an Al wiring film and allow exposing a photo resist film in a desired pattern at high accuracy, by providing a process wherein the absorption layer for exposure rays of light is previously formed on a metallic film for wiring. CONSTITUTION:As illustrated, an SiO2 film 12 for element isolation is formed on a P type Si substrate 11, and N type impurity i.e. phosphor(P), etc. is diffused on the region divided by said SiO2 film resulting in the formation of a source region 13 and drain region 14. Further, a gate electrode 16 constituted of a poly Si is formed via a gate oxide film 15, a phosphorus silica glass(PSG) film 17 is formed thereon, and a through hole 19 to take connection with the Al wiring film 18 formed on the gate electrode and said PSG film is formed. Since the absorption layer 20 for exposure rays of light of the photo resist film is formed on the Al wiring film, the reflection of G ray having long wavelength of the ultraviolet rays reflected on the A wiring film after passing through the photo resist film is alleviated. |
