EPITAXIAL SINGLE CRYSTAL AND MANUFACTURE

摘要

One or more single crystals (4) having a composition xSiC.(1-x)A l N where x is 0.2 to 0.5, are formed epitaxially on a substrate (5) of Al2O3 by heating sources of SiC (7) and AlN (8), disposed close to the substrate, at a temperature between 1900 and 2020 DEG C in the presence of N2 and H2 directed to flow over the sources of SiC and AlN towards the substrate.