| 摘要 |
<p>PURPOSE:To eliminate scattered wiring material caused short circuits and to let the device keep a neat appearance by a method wherein a wiring is composed of Mo or W or the like and a part to be removed therefrom for disconnection is exposed to an oxidation/sublimination causing energy beam, in a memory device wherein the wiring for a bit wire or a word wire is disconnected for programing. CONSTITUTION:A wiring 2 is removed of a specified part (x) to effect programing, in a PROM with a transistor Tr and wirings 2-2'' provided on a film exemplifiedly of SiO2 covering the entire surface of a device. That is, a 2,000- 4,000Angstrom thick and not more than several micrometer wide wiring 2 of Mo or W is formed on a ground work constituting SiO2 layer 1, which in turn is covered with a PSG film 3. The part (x) or the part 12 is then removed. This process is accomplished by providing a windnow 13 in the PSG film 3, which is exposed to a YAG laser beam L with its spot diameter trimmed by a slit 4, for the removal by rapid sublimation of the part 12 in the wiring 2.</p> |
