| 摘要 |
PURPOSE:To enable to convert reaction gas into plasma sufficiently and uniformly in a short time by a method wherein a gas diffusion means to convert a flow of reaction gas into a turbulent flow is provided in a reaction vessel. CONSTITUTION:Plate electrodes 12A, 12B, of two sheets are arranged facing with each other in the reaction vessel 10. Semiconductor wafers 14 to be treated with plasma reaction are supported in the electrode 12A. A gas diffusion plate 24 formed with plural number of gas flow holes 26 is arragned between the electrodes 12A, 12b thereof. The diffusion plate 24 thereof is connected to a high frequency electric power source 20, and performs also the part as the electrode. Accordingly the diffusion plate 24 forms the electrode pair with the respective electrodes 12A, 12B. As a result, reaction gas flowed into the vessel 10 is converted into plasma at first in the gap between the electrode 12B and the diffusion plate 24, and then reaction gas not converted into plasma is converted into the turbulent flow through the holes 26 in the diffusion plate 24, and is convetyed into plasma in the gap between the diffusion plate 24 and the electrode 12A. Accordingly two times conversion are performed in the gap between the two electrode pairs, and the more favorable ratio of conversion into plasma can be obtained in a short time. |
