| 摘要 |
PURPOSE:To acquire an amorphous semiconductor film which is suitable for a solar cell, a thin-film transistor, an image pickup device and so forth, and excellent in quality, by providing a porous electrode and a porous electrode heater through an insulator. CONSTITUTION:An insulator of silicon oxide, titan oxide, magnesium oxide or the like is laid between a porous electrode 31 for high frequency application and a resistace line heater 33 of nichrome, tungsten or the like to heat the electrode 31. An amorphous semiconductor thin-film is made after discharging in such electrode. It is improved in optical conductivity and quality. |
