| 摘要 |
PURPOSE:To form a Schottky barrier by laminating an n-type a-Si film, an i-type a-Si film on a p-type silicon substrate and forming a transparent conduc tive film and a polyaniline film thereon. CONSTITUTION:A transparent conductive film 8 made of ITO is formed by electron beam depositing or sputtering 1000Angstrom thick on a silicon substrate 7. Then, the substrate 7 is dipped in an aqueous solution which contains 0.05 mol.dm<-3> of aniline and 0.1 mol.dm<-3> of perchloric acid, and a polyaniline film 9 is formed by a constant potential oxidation polymerization method on the film 8. Further, after a transparent conductive film 10 made of ITO is formed thereon similarly to the film 8, a first leading electrode 11 made of palladium or titanium-silver alloy is formed on the film 10, and a second leading electrode 12 is formed on the rear surface of the substrate 7. A Schottky barrier is formed among the films 9, 8 and the substrate. |
