| 摘要 |
PURPOSE:To prevent the eluting out of silicon in a semiconductor device by forming a metal layer made of a high melting point metal or its alloy, niride, silicide between the metal layer forming an intermetallic compound between the lower and upper wiring layers and the upper wiring layer. CONSTITUTION:An aluminum layer 6 of the first layer is formed through an SiO2 film 9 having a window on a silicon substrate 1 formed with a collector region 2, a base region 3 and an emitter region 4. An SiO2 film 10 to become an interlayer insulating layer i formed, a window is formed at the film 10 at the interlayer connecting section, a metal film 11 for forming a metallic component TiAl3 and a metallic film 12 which prevents the eluting out of Si are formed, and the aluminum layer 8 of the second layer is formed. Titanium- tungsten, tungsten, tantalum, or titanium nitride is employed as the film 12. Further, as the film 11, titanium, molybdenum, or platinum is employed. |
