发明名称 GATE CONTROLLING CIRCUIT OF GATE TURN-OFF THYRISTOR
摘要 PURPOSE:To reduce power consumption, by connecting a semiconductor switch to a route through which an ON-gate current flows to turn on the switch just for a necessary time and preventing the saturation of a pulse transformer as well as flowing the minimum necessary ON-gate current. CONSTITUTION:A current which turns on a gate turn-off thyristor GTO1 and a current which turns off the GTO1 are supplies to the secondary side of the same pulse transformer 5. A switch circuit consisting of a transistor TR10 and a resistance 11 and a capacitor 12 forming a time constant circuit at the base of the TR10 are connected to a circuit to which the ON current of the GTO1 flows. In addition, a resistance 8 and a diode 6 are connected between the GTO1 and the TR10. Then the TR10 is made to conduct when the ON current flows to the GTO1, and the capacitor 12 is charged. With this charging, the TR10 is turned off. After this, the ON-gate current is flowed from an ON-gate circuit 9 having a large width, and the equal flowing time is secured between the ON and OFF currents to the transformer 5. Thus saturation is prevented for the transformer 5.
申请公布号 JPS57203331(A) 申请公布日期 1982.12.13
申请号 JP19810088212 申请日期 1981.06.10
申请人 HITACHI SEISAKUSHO KK 发明人 SATOU MASAYOSHI;FUKUI HIROSHI;HIROSE MASAYUKI
分类号 H02M1/06;H03K17/723;H03K17/73;H03K17/732 主分类号 H02M1/06
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