| 摘要 |
PURPOSE:To shift the irradiating direction of a light beam from the direction along a stripe, by replacing a part of a confining layer constituting the optical semiconductor device by a layer having a different refractive index, providing a light irradiating window on said boundary, and providing a stripe region reaching the confining layer along the window. CONSTITUTION:On an n type InP substrate 11, an n type InP confining layer 12, an InGaAsP active layer 13, and a p type InP layer 14 are layered and epitaxially grown. The outside part of the layer 14 from the area, wherein a p type stripe forming region 17 is to be formed later, is changed into p type refracrive index difference forming layer 15 by the diffusion of impurities such as Cd and Zn. Then an n type InP cap layer 16 is formed on the layer 15 and the layer 14 continued from the layer 15. The p type stripe region 17, which reaches the middle of the layer 14 and whose lower end is separated from the layer 15 by a specified interval, is formed by the similar impurity diffusion. Thereafter, a positive electrode 18 is deposited on the entire surface of the layer 16. A light irradiating window 18a is provided at a part facing the layer 15 at the one side of the region 17. A negative electrode 19 is deposited on the back surface of the substrate 11. |
