| 摘要 |
PURPOSE:To contrive high integration and high speed, by forming an inversed conductive type region for a silicon substrate on an opening part next to form a region with higher impurity density than that of the substrate by the same conductive type impurity as the silicon substrate by ion injection. CONSTITUTION:An insulating film 302 is adhered on the surface of a P type Si substrate 301 to provide an opening on said insulating film with an N<+> collector buried layer 30 formed on the opening 303 with said insulating film as a mask. Then, P type impurity is implanted by ion injection over the entire surface of the Si substrate from above of the insulating film to form a P<+> region 305 for density over than that of substrate impurity. Next, the insulating film 302 is removed for the growth of an N type epitaxial 306 to a desired thickness thereafter to a bi-polar type IC with an ordinary N-P-N transistor as the element. Thus, the purpose is attained with less parasitic capacity of a channel stopper P<+> region and a base region. |
