| 摘要 |
<p>PROBLEM TO BE SOLVED: To prevent the turning-up of metals and the formation of burrs, when dicing ie performed for a semiconductor substrate by etching the metal wiring exposed from the opening of a protecting insulation film at the part of the metal wiring pad from the circuit of a monitoring transistor formed in a scribing region. SOLUTION: When a monitoring transistor (TEG) is formed in a scribing region 105, it is necessary to open a hole in a protective insulation film at a pad part 101 of the TEG for measuring the electrical characteristics of a semiconductor device formed on a semiconductor substrate. That is to say, the part, which is exposed from the opening 102 of the protecting insulation film of the pad of the TSG formed on the scribing region 105 on the semiconductor substrate, is removed by etching. In this way, the problem of the occurrence of the burrs at dicing time can be ressolved.</p> |
