| 摘要 |
PURPOSE:To manufacture the vessel for sintering a compound semiconductor thin-film applied onto a substrate by using graphite. CONSTITUTION:The vessel consists of a shallow box-shaped vessel 1 and a cover 2 loosely fitted to the vessel 1, and a small hole 3 is formed to the cover as necessary. The silicon resin carbide thin-film 4 is shaped to the necessary section of the surface of the vessel in order to prevent the pollution of a semiconductor sintered film due to the falling off of the impalpable powder of graphite and improve the durability of the vessel for baking. According to this manufacture, the graphite block of 15% porosity and 1,200ppm ash content is formed in shape, external form size thereof is 360X360X45mm. and which is shown in the figure, through machining, and a material obtained by diluting silicon resin varnish by xylene and bringing a resin section to 5% is applied onto the surface. The block is heated for one hr. at 120 deg.C and for two hr. at 250 deg.C, slowly temperature- raised in nitrogen gas, kept for two hr. at 1,100 deg.C and cooled. |
