| 摘要 |
PURPOSE:To obtain a bipolar transistor having excellent high-frequency characterisitcs by alternately arranging common electrode windows with input electrode windows and forming a pair of output electrode windows at equal distance from the common electrode windows at the outermost sides. CONSTITUTION:Two emitters are shaped to a base layer 7, and a common electrode 9 is extracted in one direction from the emitter electrode windows 8. The base electrode windows 10 are formed at both sides of the emitters, and base resistance is decreased. Common base electrodes are extracted in the same direction as the electrode 9, and directed in the same direction as the base layer 7. The collector electrode windows 12 are shaped outside the base layer 7 while holding a base, and a collector electrode 13 is extracted in the opposite direction to the base and the emitter. According to this constitution, excellent high-frequency characteristics and noise characteristcs are realized even when the emitters are driven by high currents because the areas of the emitters are increased and the base resistance is reduced and currents can uniformly be flowed through each emitter. |
