| 摘要 |
PURPOSE:To reduce electrode resistance, by providing two electrode parts, electrode take-out parts led out each other in opposite direction from the center of this electrode and S, D electrode take-out parts led out from the both sides of those take-out parts in a dual gate FET. CONSTITUTION:An N type GaAs active layer 2' is formed on a GaAs substrate 1'. Gate electrodes 50, 60 have electrode parts 5'', 6'' to form channel regions and gate electrode take-out parts 5', 6' led out from the center of these gate electrodes. A source electrode 3' is led out from the both sides of the gate take-out part 5' in clearance from the gate electrode part 5'' in an integral and continuous body. A drain electrode 4' is formed in the same way. Thus, the voltage drop of the gate electrode parts on the both ends of the two gate electrode parts 5'', 6'' are equal and small with the resistance of electrode patterns negligible. |
