| 发明名称 |
Semiconductor device having fin structure that includes dummy fins |
| 摘要 |
A semiconductor device includes: a substrate, a fin-shaped structure on the substrate, and a dummy fin-shaped structure on the substrate and adjacent to the fin-shaped structure. Preferably, the fin-shaped structure includes a gate structure thereon and a first epitaxial layer adjacent to two sides of the gate structure, and the dummy fin-shaped structure includes a second epitaxial layer thereon. A contact plug is disposed on the first epitaxial layer and the second epitaxial layer. |
| 申请公布号 |
US9385220(B2) |
申请公布日期 |
2016.07.05 |
| 申请号 |
US201514588989 |
申请日期 |
2015.01.05 |
| 申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
Liou En-Chiuan |
| 分类号 |
H01L29/78;H01L29/66;H01L29/06;H01L29/161;H01L29/24 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
Hsu Winston;Margo Scott |
| 主权项 |
1. A semiconductor device, comprising:
a substrate; a fin-shaped structure on the substrate, wherein the fin-shaped structure comprises a gate structure thereon and a first epitaxial layer adjacent to two sides of the gate structure; a dummy fin-shaped structure on the substrate and adjacent to the fin-shaped structure, wherein the dummy fin-shaped structure comprises a second epitaxial layer thereon; and a contact plug on the first epitaxial layer and the second epitaxial layer. |
| 地址 |
Science-Based Industrial Park, Hsin-Chu TW |
