| 摘要 |
PURPOSE:To form a semiconductor laser capable of oscillating in single lateral mode by forming a clad layer and an active layer through a current blocking layer with a layer locking at the end of a groove on a substrate having a striped groove. CONSTITUTION:A striped groove 48 is formed on an n type GaAs substrate 40, and a p type GaAlAs current blocking layer 41 defected partly with a layer is formed at the end 49 of the groove thereon. Then, an n type GaAlAs clad layer 42, a GaAs active layer 43, a p type GaAlAs clad layer 44 and a p type GaAs electrode forming layer 45 are sequentially laminated thereon, and a p type electrode 46 and an n type electrode 47 are formed. In this manner, a semiconductor laser capable of oscillating in basic single lateral mode can be obtained even with large current. |
