| 摘要 |
PURPOSE:To obtain high reliable multilayer wirings of a semiconductor device by a method wherein after a high melting point metal film is adhered on the first layer Al film and patterning is performed, an interlayer insulating layer is accumulated thereon, and the second Al layer is provided on the insulating layer being softened to be molten by irradiation of energy rays. CONSTITUTION:The Al wiring 13 of the first layer is applied on an SiO2 film 12 on an Si substrate 11, Ti is adhered thereon selectively, and PSG14 is accumulated thereon by the CVD method. When it is irradiated with CO2 laser, PSG only is melted selectively to make the step parts smoothly. The Al wiring 15 of the second layer is formed in succession. By this constitution, melting out of the first Al layer breaking PSG when irradiation of CO2 laser is performed can be avoided, the IC can be formed in high density, and reliability is also enhanced. |
