| 摘要 |
PURPOSE:To reduce the thermal resistance of a semiconductor device by interposing a conductive plate having wider area than the surface area of an element electrode between the element electrode for connecting an external electrode formed on a semiconductor substrate and an electrode for externally connecting and forming in a stripe structure radially extending in the shape of the element electrode. CONSTITUTION:An active layer 5 formed on the surface layer of a GaAs substrate 2 is projected in a mesa shape, a surface protective film 6 is covered on the side surface of the projected layer 5, and the region except the side surface is protected by a metallic layer 10. When an external electrode connecting element electrode 4 is then formed through a Schottky metal 3 on the layer 5, the electrode is formed in a star shape, and a radial stripe-shaped mesa junction 9 is formed from the metal 3. Thereafter, a bonding disc 11 having a wider area than the surface area is secured onto the electrode 4, and an externally connecting electrode is connected to the disc 11 with a bonding wire 13. In this manner, a series resistance is decreased, thereby improving the cut-off frequency. |
