| 摘要 |
PURPOSE:To grasp the quantity and speed of etching by the magnitude of signals obtained by detecting incident electrons and the uantity of ions at the time of dry etching through the combination of a cathode luminescence material, an interference filter and a photo diode. CONSTITUTION:A pin hole 2 from which electrons and ions can be projected is formed to an electrode 1 for the sample of a parallel slat type etching device, Y2O2S 3 is positioned under the pin hole, light is emitted through the incidence of electrons, converted photoelectrically by the Si photo diode 5 through the optical interference filter 4, and signals proportional to the quantity of incident electrons are obtained. The speed of etching can be determined by the signals. According to this constitution, the decision of the end point of etching and the setting of the speed of etching can be executed effectibely because the density of plasma and the temperature of electrons change by a discharged gas through plasma etching even when input and the degree of vacuum are the same, and reliability and reproducibility are improved. A detecting section can be insulated electrically because a luminous phenomenon is used, and the accurate information of the electrode 1 self-biased is obtained. |
