| 摘要 |
PURPOSE:To bond a Cu-C complex and a radiating plate strongly within the range that the complex is not expanded by bonding a buffer plate and the radiating plate by using a solder material consisting of 15wt% Cu, 1-5wt% Ag and P. CONSTITUTION:The buffer plate and the radiating plate are bonded by using the solder material composed of 15wt% Cu, 1-5wt% Ag and P. The Cu-C complex is hardly expanded because both plates can be bonded at 700 deg.C or lower through the bonding method. The solder material of 15wt% Cu, 1-5wt% Ag and P is approximately equal to Ag in thermal conductivity, and does not form a large number of voids as solder. The Cu-C complex may be manufactured by knitting C fibers in a latticed shape, arranging the fibers in a Cu matrix shape at randum or spirally disposing them. |
