发明名称 |
Method of manufacturing semiconductor device |
摘要 |
A method of manufacturing a semiconductor device comprising preparing a semiconductor substrate which includes at least three semiconductor layers of alternately different conductivity types and in which one of the semiconductor layers is divided into a plurality of respectively independent regions on each of which an electrode film is provided. When one of the regions of the semiconductor layer is found defective, a substantial portion of the electrode film provided on the defective region is removed by trimming to lower the surface level of the electrode film relative to the others.
|
申请公布号 |
US4341011(A) |
申请公布日期 |
1982.07.27 |
申请号 |
US19800193456 |
申请日期 |
1980.10.03 |
申请人 |
HITACHI, LTD. |
发明人 |
OKANO, SADAO;HOMMA, HIDEO |
分类号 |
H01L21/331;H01L29/417;H01L29/73;H01L29/74;H01L29/744;(IPC1-7):H01L21/92 |
主分类号 |
H01L21/331 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|