| 摘要 |
PURPOSE:To form a good contact to a difusion layer when the diffusion layer is formed shallow by a method wherein inpurity ions are implanted and thereafter a contact window is formed without activating the implanted impurity ions. CONSTITUTION:Impurity ions are implanted to a P channel area and N channel area respectively, and thereafter an insulation film 3' is grown on the entire surface. subsequently, a contact window 12 is formed without activating the implanted impurity ions. Thereafter, a polycrystal line Si film 13 is formed only in the interior of the window 12. Thereafter, the impurity ion implanted into substrate 1 is activated by providing for it a heat treatment and source regions 8, 10 and drain regions 9, 11 are formed. The impurity is absorbed to the interior of a nondoped film 13 through the heat treatment, as a result, a good ohmic contact condition can be obtained between the film 13 and the source and drain regions, formed. Thereafter, an electrode 14 is formed and the ohmic connection is established between the electrdoe 14 and the regions 8-11. |
