| 摘要 |
PURPOSE:To facilitate the formation of an ohmic electrode by forming an infrared transmission plate on the surface of forming an element of a semiconductor substrate, reducing the thickness of the back surface, implanting ions, then annealing it with a laser, and forming a metallic layer. CONSTITUTION:A conductive transparent wax 6 (7 represents a scribing line) and a conductive transparent glass layer 5 wich transmit infrared rays are formed on the surface of a semiconductor substrate 1 formed with an element (transistor). The back surface of the substrate is reduced to a 30mum of thickness. Phosphorus ions are implanted on the front surface of the substrate. Then, the substrate is annealed with a laser to form a high impurity density layer to form a Ti layer 8 and an Au layer 9 thereon. Since the substrate does not employ a high temperature step in this manner, it does not deteriorate the crystallinity, thereby forming a good ohmic contact layer. |
