| 摘要 |
PURPOSE:To prevent damage of a protective film at the time of the electrode formation by a method wherein after a photo resist film is covered on the PSG protective film deposited on a recess part around a mesa part including a PN junction of an IRED element, gold-tin films are formed over the entire surface of a substrate and removed with a sticking tape selectively. CONSTITUTION:A P layer 2, an N layer 3 and a P<+> layer 4 are formed on a GaAlAs substrate 1. And, gold electrodes 5a, 5b are formed, and mesa etch 6 is formed between the N layer 3 and the P<+> layer 4. A PSG film is formed within a recess part 6. A backing plate 8 is sticked on the substrate side by means of a photoresist 9. A photoresist 11 is provided on the electrode forming surface, and is left on only a mesa groove part. On an Au film on said resist 11 an Sn film 13 is formed, and an adhesive tape is sticked on said films. Further, said films are left on only an electrode part selectively by stripping said tape compulsorily. Hereby, damage to the protective film is removed when the electrode is formed, and an IRED is formed without defects from the viewpoint of the appearance and the characteristics. |
