| 摘要 |
PURPOSE:To form a semiconductor device having small floating capacity between a digit line and other conductive layer by thermally oxidizing a plurality of polycrystalline silicon layers of different layers with a thin film containing an oxidation resistant material as mast and forming an interlayer insulating film. CONSTITUTION:A channel stopper 602, a thick oxidized film 603, a thin oxidized silicon film 604 and a nitrided silicon film 605 are formed on a P type silicon substrate 601 surface. After a polycrystalline silicon layer 606 is grown in vapor phase, a phosphorus is diffused, and is selectively etched. A thick oxidized silicon film 607 is then formed on the layer 606. Subsequently, a hole is formed to grow a polycrystalline silicon 609, a phosphorus is diffused to form an N type diffused layer 610, and is patterned to form a digit line 609. Then, an oxidized film 611 is formed on the surface, the insulating film is then selectively etched to form a gate oxidized film 612, and a transfer gate 613 is formed. |
