| 摘要 |
PURPOSE:To form a plurality of elements on a substrate by using two or more kinds of gate materials for gate electrodes of an MOS semiconductor device. CONSTITUTION:A gate oxide film is formed on an Si substrate, having a source and a drain regions, on which a multi-crystal Si 4 is formed. At a part on the multi-crystal Si 4, an Al electrode is made and, by heat treatment, an aluminum silicide layer 9 is formed. Elements with different properties are thus provided on the same substrate without increasing the number of process but just by changing a part of electrode materials. |
